| PART |
Description |
Maker |
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| NMC27C64 NMC27C64N200 NMC27C64Q150 NMC27C64NE200 |
65 /536-Bit (8192 x 8) CMOS EPROM
IC-64K CMOS PROM 8K X 8 EEPROM 5V, 200 ns, PDIP28
65,536-Bit (8192 x 8) CMOS EPROM
64KBit (8192 x 8) CMOS EPROM [Life-time buy]
|
Fairchild Semiconductor, Corp.
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| TC58256FTI |
CMOS NAND EPROM
|
Toshiba
|
| TC582562AXB |
CMOS NAND EPROM
|
Toshiba
|
| TC58NS100DC |
1 GBit CMOS NAND EPROM
|
Toshiba
|
| K9F1208U0A-P K9F1216D0A K9F1216D0A-P K9F1216D0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
